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ELECTRON BEAM RESISTS WITH
ULTRA-HIGH ASPECT RATIOS

Electron beam lithography (EBL) allows the fabrication of nano-scale structures via the patterning of a thin film resist with a narrow beam of electrons. The pattern is then transferred from the resist material on to or into a substrate via lift-off (metallisation) or etching processes respectively.

Current electron beam resists such as PMMA achieve aspect ratios of 4:1 and 12.5:1 at acceleration voltages of 25KV and 100KV respectively.

Based on their new resist technology, Sci-Tron have produced a negative tone resist that significantly out-performs other resists on the market and offers major benefits to users.